The thermal resistance is specified in degrees Celsius per watt. While the package is capable of dissipating 625mW, the thermal resistance of the TO-92 case limits the practical power dissipation. The power dissipation must also be taken into account. However, at high currents, the gain drops off rapidly and a base current of up to 50mA is needed to achieve high collector currents. The S9013 also has a high collector current rating of 500mA. This limited bandwidth is due to internal parasitic capacitances.
The transition frequency of a transistor is the frequency at which current gain drops to one, beyond which the transistor can no longer amplify signals. The S9013 is a high current fast NPN transistor that can be used for general-purpose switching and amplification. Note: Complete technical details can be found in the S9013 datasheet linked at the end of this page. TO-92 package with 650mW power dissipation.It also has a relatively large collector current capacity of 500mA.Ĭurrent into this terminal controls current between the collector and emitter It features a high transition frequency of 140MHz, making it suitable for high-frequency applications. If you are designing a PCD or Perf board with this component then the following picture from the 2N5551 Datasheet will be useful to know its package type and dimensions.The S9013 is a medium-power NPN transistor used for general purpose switching and amplification. Therefore the output voltage Vout can be given as Vout = VCE = (Vcc – IcRc) This output voltage depends on the Input voltage (Vcc, here 12V) without the voltage drop across the loads resistor (R1). The output is obtained across the collector which is the Collector-Emitter voltage (V CE). The S9013 is a high current fast NPN transistor that can be used for general-purpose switching and amplification. Normally the value of collector current will e given by I E = I C + I B I c = βI bĪnother current that we have bring into consideration is the emitter current (I E), but due to transistor action we assume that Emitter current is almost equal to the value of Collector current, however the difference between the both can be found with the value of α. This means that the collector current will be amplified by 80 times than that of the base current. This amplification depends on the amplification factor (h fe) which is 80 for 2N5551. Changing the value of R L will affect the amplification of the output wave.Ī transistor is normally a current amplifier, meaning the current flowing though the base will be amplified in the current flowing through the collector.
The Resistor R1 is the load resistor and the resistor R2 is the emitter resistor. In the above circuit the resistors R3 and R4 form a potential divider which decides the Emitter -Base voltage (V BE). Here the input sine wave of magnitude 8mV (yellow colour) is amplified to 50mV (Pink colour) as shown in the graph. The simulation graph that shows the amplified output sine wave can also be found. A very simple bare minimum circuit for a transistor to work as an amplifier is shown below. So if you are looking for an NPN transistor for you amplifier circuit, then this transistor might be the right choice.Īs told earlier the 2N5551 NPN transistor is widely used for amplification. It also has decent switching characteristics (Transition frequency is 100MHz) hence can amplify low-level signals.ĭue to this feature, the transistor is commonly used for amplification of audio or other low power signals. The 2N5551 is an NPN amplifier Transistor with an amplification factor (hfe) of 80 when the collector current is 10mA.
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